01 / 产品信息
产品概述
Infineon IRF9332TRPBF（MOSFET(HEXFET功率)）面向电机驱动、电源转换与功率放大等高压大电流应用。原装正品货源，Rds(on)、Vceo 与封装热性能以官方 Datasheet 为准。欢迎咨询批量报价与现货。
- 厂商
- 英飞凌
- 型号
- IRF9332TRPBF
- 品类
- MOSFET(HEXFET功率)
- 封装
- TOLL
- 包装
- 卷带
- 成色
- 全新原装
- 合规
- 符合 RoHS
- 生命周期
- 与原厂确认
- 交期 / 最小起订量
- 以报价为准
02 / 技术资料
技术参数
37 项结构与连接
- PD @TA = 25°C Power Dissipation f
- 2.5
- PD @TA = 70°C Power Dissipation f
- 1.6
- Linear Derating Factor
- 0.02 W/°C
- RDS(on)
- 13.6
- IGSS Gate-to-Source Forward Leakage
- 100 VGS=-20V
- Gate-to-Source Reverse Leakage
- 100 VGS=20V
- gfs Forward Transconductance
- 36
- Qg Total Gate Charge h
- 14
- Qgs Gate-to-Source Charge h
- 4.1
- Qgd Gate-to-Drain Charge h
- 6.6 ID=-7.8A
- td(on) Turn-On Delay Time
- 15
- tr Rise Time
- 47 ID=-1.0A
- td(off) Turn-Off Delay Time
- 73 RG=6.8Ω
- tf Fall Time
- 58
- Ciss Input Capacitance
- 1270 VGS=0V
- Coss Output Capacitance
- 250
- Crss Reverse Transfer Capacitance
- 180 ƒ=1.0KHz
- EAS Single Pulse Avalanche Energy d
- 102 mJ
- trr Reverse Recovery Time ––– 36
- 54
- Qrr Reverse Recovery Charge ––– 20
- 30
- trr Reverse Recovery Time
- 36
- Qrr Reverse Recovery Charge
- 20
- RθJL Junction-to-Drain Lead g
- 20
- RθJA Junction-to-Ambient f
- 50
性能与环境
- VDS Drain-to-Source Voltage
- 30
- VGS Gate-to-Source Voltage
- ±20
- ID @ TA = 25°C Continuous Drain Current, VGS @ -10V
- 9.8
- ID @ TA = 70°C Continuous Drain Current, VGS @ -10V
- 7.8 A
- IDM Pulsed Drain Current c
- 80
- BVDSS Drain-to-Source Breakdown Voltage
- 30
- ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient
- 0.021
- VGS(th) Gate Threshold Voltage
- 1.9 V
- ∆VGS(th) Gate Threshold Voltage Coefficient
- 5.7 mV/°C
- IDSS Drain-to-Source Leakage Current
- 1.0
- RG Gate Resistance h
- 18 Ω
- IAR Avalanche Current c
- 7.8 A
- VSD Diode Forward Voltage
- 1.2
03 / 原厂资料
规格与文档
请使用原厂官方文档，在设计定稿前核对电气特性、封装尺寸与工作限值。
请确认当前库存、生产日期代码、包装、价格与交货条款。产品信息不构成约束性报价，最终规格以报价为准。