01 / 产品信息
产品概述
氮化镓系统 GaN功率器件 GS-065-011-2-L-TR 为原装正品元器件，适用于相关电路设计与批量采购。我们提供完整规格资料、规格书与灵活报价，支持小批量试样与长期稳定供货。
- 厂商
- 氮化镓系统
- 型号
- GS-065-011-2-L-TR
- 品类
- GaN功率器件
- 成色
- 全新原装
- 生命周期
- 与原厂确认
- 交期 / 最小起订量
- 以报价为准
02 / 技术资料
技术参数
35 项结构与连接
- Gate-to-Source Threshold VGS(th)
- 1.7
- Input Capacitance
- 70 pF
- Output Capacitance
- 20 pFVGS=0V
- Reverse Transfer Capacitance
- 0.4 pF
- CO(ER)
- 30 pF
- CO(TR)
- 47 pF
- Total Gate Charge
- 2.2 nC
- Gate-to-Source Charge
- 0.7 nC
- Gate-to-Drain Charge
- 0.7 nC
- Output Charge
- 19
- Reverse Recovery Charge
- 0 nC
- Turn-On Delay tD(on)
- 5 ns
- Rise Time tR
- 5 ns
- Turn-Off Delay tD(off)
- 8
- Fall Time tF
- 10
- Switching Energy during turn-on Eon
- 20 µJ
- Switching Energy during turn-off Eoff
- 5.8 µJ
- EOSS
- 2.4 µJ
性能与环境
- Operating Junction Temperature TJ -5
- 5 to +150 °C
- Storage Temperature Range TS -5
- 5 to +150 °C
- Drain-to-Source Voltage
- 650 V
- Drain-to-Source Voltage - transient (Note 1) VDS(transient)
- 850 V
- Gate-to-Source Voltage VGS
- 10 to +7 V
- Gate-to-Source Voltage - transient (Note 1) VGS(transient)
- 20 to +10 V
- Continuous Drain Current (Tcase = 25 °C)
- 11 A
- Continuous Drain Current (Tcase = 100 °C)
- 7.2 A
- Thermal Resistance (junction-to-case) – bottom side RΘJC
- 1.4 °C/W
- Thermal Resistance (junction-to-ambient) (Note 3) RΘJA
- 36 °C/W
- Maximum Soldering Temperature (MSL3 rated)
- 260 °C
- Drain-to-Source Blocking Voltage V(BL)DSS
- 650
- Drain-to-Source On Resistance RDS(on)
- 150 mΩ
- Gate-to-Source Current
- 57
- Gate Plateau Voltage Vplat
- 3.5
- Drain-to-Source Leakage Current
- 0.7 µA
- Internal Gate Resistance
- 1.4 Ωf=5MHz
03 / 原厂资料
规格与文档
请使用原厂官方文档，在设计定稿前核对电气特性、封装尺寸与工作限值。
请确认当前库存、生产日期代码、包装、价格与交货条款。产品信息不构成约束性报价，最终规格以报价为准。