01 / 产品信息
产品概述
Micro Commercial Components (MCC) BSS138-TP（小信号 MOSFET）为正品原装功率分立器件。电压、电流及热阻参数详见官方数据手册。
- 厂商
- FSC
- 型号
- BSS138
- 品类
- 晶闸管(SCR)
- 成色
- 全新原装
- 生命周期
- 与原厂确认
- 交期 / 最小起订量
- 以报价为准
02 / 技术资料
技术参数
26 项结构与连接
- BVDSS Drain–Source Breakdown
- 0
- Coefficient
- 25°C
- gFS Forward Transconductanc
- 12
- VDS = 50 V, VGS = 0 V
- 5
- VDS = 30 V, VGS = 0
- 100 nA
- IGSS Gate–Body Leakage VGS = ±20 V, VDS = 0
- ±100
- VGS = 4.5 V, ID = 0.22
- 1.0
- VGS = 10 V, ID = 0.22 A
- 1.1
- gFS Forward Transconductance VDS = 10 V, ID = 0.22
- 0.5 S
- Ciss Input Capacitance VDS = 25 V, VGS = 0 V
- 27 pF
- Coss Output Capacitance
- 13 pF
- Crss Reverse Transfer Capacitance
- 6 pF
- td(on) Turn–On Delay Time VDD = 30 V, ID = 0.29 A
- 2.5 ns
- tr Turn–On Rise Time
- 9 ns
- td(off) Turn–Off Delay Time
- 20 ns
- tf Turn–Off Fall Time
- 7 ns
- Qg Total Gate Charge VDS = 25 V, ID = 0.22 A
- 1.7 nC
- Qgs Gate–Source Charge
- 0.1 nC
- Qgd Gate–Drain Charge
- 0.4 nC
性能与环境
- RJA Thermal Resistance, Jun
- 350
- BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 A
- 50 V
- IDSS Zero Gate Voltage Drain Current VDS = 50 V, VGS = 0
- 0.5 A
- VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA
- 1.3 V
- ID(on) On–State Drain Current VGS = 10 V, VDS = 5
- 0.2 A
- RG Gate Resistance VGS = 15 mV, f = 1.0 MHz
- 9
- IS Maximum Continuous Drain–Source Diode Forward Current
- 0.22 A
03 / 原厂资料
规格与文档
请使用原厂官方文档，在设计定稿前核对电气特性、封装尺寸与工作限值。
请确认当前库存、生产日期代码、包装、价格与交货条款。产品信息不构成约束性报价，最终规格以报价为准。