01 / 产品信息
产品概述
AOS MOSFET AO3404A 为原装正品元器件，适用于相关电路设计与批量采购。我们提供完整规格资料、规格书与灵活报价，支持小批量试样与长期稳定供货。
- 厂商
- AOS
- 型号
- AO3404A
- 品类
- MOSFET
- 成色
- 全新原装
- 生命周期
- 与原厂确认
- 交期 / 最小起订量
- 以报价为准
02 / 技术资料
技术参数
34 项结构与连接
- Continuous Drain TA=25°C
- 5.8
- Power Dissipation TA=70°C
- 0.9
- Maximum Junction-to-Ambient A t ≤ 10s
- 65 °C/W
- Maximum Junction-to-Ambient A Steady-State
- 85 °C/W
- Maximum Junction-to-Lead C Steady-State RqJL
- 63 °C/W
- VDS=30V, VGS=0V
- 1
- VGS=10V, ID=5.8A
- 8.4
- VGS=4.5V, ID=4.8A
- 4.5 mW
- gFS Forward Transconductance VDS=5V, ID=5.8A
- 22 S
- Ciss Input Capacitance
- 373 pF
- Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz
- 67 pF
- Crss Reverse Transfer Capacitance
- 41 pF
- Qg(10V) Total Gate Charge
- 7.1 nC
- Qg(4.5V) Total Gate Charge
- 3.3 nC
- Qgs Gate Source Charge
- 1.4 nC
- Qgd Gate Drain Charge
- 1.7 nC
- tD(on) Turn-On DelayTime
- 4.5 ns
- tr Turn-On Rise Time VGS=10V, VDS=15V, RL=2.6W
- 2.4 ns
- tD(off) Turn-Off DelayTime RGEN=3W
- 4.8 ns
- tf Turn-Off Fall Time
- 2.5 ns
- trr Body Diode Reverse Recovery Time IF=5.8A, di/dt=100A/ms
- 0.5 ns
- 4.5V
- 9
性能与环境
- Drain-Source Voltage
- 30 V
- Gate-Source Voltage
- ±20 V
- Current TA=70°C
- 4.9 A
- Junction and Storage Temperature Range TJ
- 55 to 150 °C
- BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V
- 30 V
- IGSS Gate-Body leakage current VDS=0V, VGS= ±20V
- 100 nA
- VGS(th) Gate Threshold Voltage VDS=VGS ID=250mA
- 2.1 V
- ID(ON) On state drain current VGS=4.5V, VDS=5V
- 64 A
- RDS(ON) Static Drain-Source On-Resistance TJ=125°C
- 6.2
- VSD Diode Forward Voltage IS=1A, VGS=0V
- 1 V
- IS Maximum Body-Diode Continuous Current
- 2.5 A
- Rg Gate resistance VGS=0V, VDS=0V, f=1MHz
- 1.8 W
03 / 原厂资料
规格与文档
请使用原厂官方文档，在设计定稿前核对电气特性、封装尺寸与工作限值。
请确认当前库存、生产日期代码、包装、价格与交货条款。产品信息不构成约束性报价，最终规格以报价为准。