WMO18N20T2
Wayon WMO18N20T2 (MOSFET (Trench N-Channel)) suits high-voltage, high-current applications such as motor drives, power conversion and power amplification. Original genuine stock; Rds(on), Vceo and package thermal performance per the official Datasheet. Batch quotes and stock inquiries welcome.
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TO-252 · Generic package illustration
Based on the catalogue package field; not verified for this part. Check manufacturer documentation for dimensions, polarity and pinout.View part documentation ↓- Package
- TO-252
Product overview
Wayon WMO18N20T2 (MOSFET (Trench N-Channel)) suits high-voltage, high-current applications such as motor drives, power conversion and power amplification. Original genuine stock; Rds(on), Vceo and package thermal performance per the official Datasheet. Batch quotes and stock inquiries welcome.
- Manufacturer
- Wayon
- Part number
- WMO18N20T2
- Category
- Trench N-Channel MOSFETs
- Package
- TO-252
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
39 parametersConstruction
- Single Pulse Avalanche Energy2
- 3.2 mJ
- Total Power Dissipation TC=25°C
- 83 W
- VGS = 10V
- = 6A 96130
- VGS = 4.5V
- = 4A 105150
- Forward Transconductance4 gfs VDS = 5V, ID =
- 20A 18-S
- VGS =0V, VDS =
- 100V
- Rise Time tr VGS = 10V
- = 100V, 6
- RG = 10Ω, ID =
- 5A
- VGS = 10V, ID = 6A
- 96
- VGS = 4.5V, ID = 4A
- 105
- Forward Transconductance4 gfs VDS = 5V, ID = 20A
- 18 S
- Input Capacitance Ciss
- 534
- Output Capacitance Coss
- 30 pF
- Reverse Transfer Capacitance Crss
- 7
- Total Gate Charge Qg
- 11
- Gate-Source Charge Qgs
- 2.2 nC
- Gate-Drain Charge Qgd
- 3.8
- Turn-On Delay Time td(on)
- 11
- Rise Time tr VGS = 10V, VDD = 100V
- 6
- Turn-Off Delay Time td(off)
- 15
- Fall Time tf
- 4.8
- Reverse Recovery Time trr
- 65 ns
- Reverse Recovery Charge Qrr
- 135 nC
Performance
- Drain-Source Voltage
- 200 V
- Gate-Source Voltage
- ±20 V
- Operating Junction and Storage Temperature Range TJ, TSTG
- 55 to 150 °C
- Thermal Resistance from Junction-to-Ambient3 RθJA
- 63 °C/W
- Thermal Resistance from Junction-to-Case RθJC
- 1.5 °C/W
- Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID =
- 250µA --V
- Gate-Threshold Voltage VGS(th) VDS = VGS
- = 250µA 23V
- Diode Forward Voltage4 VSD IS = 1A, VGS =
- 0V -1.2V
- Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA
- 200 V
- Gate-body Leakage current lGSS VDS = 0V, VGS = ±20V
- ±100 nA
- Zero Gate Voltage Drain TJ=25°C
- 1
- Current TJ=100°C
- 100
- Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250µA
- 2 V
- Gate Resistance Rg f =1MHz
- 4.7 Ω
- Diode Forward Voltage4 VSD IS = 1A, VGS = 0V
- 1.2 V
- Continuous Source Current TC=25°C IS
- 18 A
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.