WMO080N10LG4
Wayon WMO080N10LG4 (MOSFET (SGT N-Channel)) suits high-voltage, high-current applications such as motor drives, power conversion and power amplification. Original genuine stock; Rds(on), Vceo and package thermal performance per the official Datasheet. Batch quotes and stock inquiries welcome.
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TO-252 · Generic package illustration
Based on the catalogue package field; not verified for this part. Check manufacturer documentation for dimensions, polarity and pinout.View part documentation ↓- Package
- TO-252
Product overview
Wayon WMO080N10LG4 (MOSFET (SGT N-Channel)) suits high-voltage, high-current applications such as motor drives, power conversion and power amplification. Original genuine stock; Rds(on), Vceo and package thermal performance per the official Datasheet. Batch quotes and stock inquiries welcome.
- Manufacturer
- Wayon
- Part number
- WMO080N10LG4
- Category
- SGT MOSFETs
- Package
- TO-252
- Packaging
- Tape & Reel
- Condition
- New & Original
- Compliance
- RoHS Compliant
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
29 parametersConstruction
- Single Pulse Avalanche Energy2
- 135.2 mJ
- Total Power Dissipation TC=25°C
- 125 W
- VDS = 5
- 0V, VGS =0V
- VGS = 10V, ID = 20A
- 6
- VGS = 4.5V, ID = 10A
- 7.6
- Forward Transconductance4 gfs VDS = 10V, ID = 20A
- 80 S
- Input Capacitance Ciss
- 1900
- Output Capacitance Coss
- 710 pF
- Reverse Transfer Capacitance Crss
- 16
- Total Gate Charge Qg
- 32.3
- Gate-Source Charge Qgs
- 4.6 nC
- Gate-Drain Charge Qgd
- 6.4
- Turn-on Delay Time td(on)
- 9
- Rise Time tr VGS =10V, VDD = 50V
- 6.1
- Turn-off Delay Time td(off)
- 31
- Fall Time tf
- 13.8
- Body Diode Reverse Recovery Time trr
- 52 ns
- Body Diode Reverse Recovery Charge Qrr
- 57.2 nC
Performance
- Drain-Source Voltage
- 100 V
- Gate-Source Voltage
- ±20 V
- Operating Junction and Storage Temperature Range TJ , TSTG
- 55 to 150 °C
- Thermal Resistance from Junction-to-Ambient3 RθJA
- 50 °C/W
- Thermal Resistance from Junction-to-Case RθJC
- 1 °C/W
- Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA
- 100 V
- Gate-Body Leakage Current lGSS VDS = 0V, VGS = ±20V
- ±100 nA
- Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250µA
- 1.7 V
- Gate Resistance RG f =1MHz
- 2 Ω
- Diode Forward Voltage4 VSD IS = 20A, VGS = 0V
- 1.2 V
- Continuous Source Current TC=25°C IS
- 90 A
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.