WMB129N10T2
Wayon WMB129N10T2 (MOSFET (SGT N-Channel)) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.
- Package
- PDFN5*6-8L
Product overview
Wayon WMB129N10T2 (MOSFET (SGT N-Channel)) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.
- Manufacturer
- Wayon
- Part number
- WMB129N10T2
- Category
- SGT MOSFETs
- Package
- PDFN5*6-8L
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
32 parametersConstruction
- Single Pulse Avalanche Energy3
- 101.2 mJ
- Total Power Dissipation4 TC=25℃
- 127.5 W
- Output Capacitance Coss VDS = 50V, VGS =0V, f
- =1MHz 920-pF
- VGS = 10V, ID = 20A
- 3.5
- VGS = 4.5V, ID = 20A
- 4.8
- Forward Transconductance2 gfs VDS = 5V, ID = 20A
- 81 S
- Input Capacitance Ciss
- 3875
- Output Capacitance Coss VDS = 50V, VGS =0V, f =1MHz
- 920 pF
- Reverse Transfer Capacitance Crss
- 41
- Total Gate Charge Qg VGS = 4.5V, VDD = 50V, ID= 20A
- 52
- Total Gate Charge Qg
- 91
- Gate-Source Charge Qgs VGS = 10V, VDS = 50V, ID= 20A
- 7.9
- Gate-Drain Charge Qgd
- 31.5
- Turn-On Delay Time td(on)
- 15.3
- Rise Time tr VGS =10V, VDS = 50V
- 17.8
- Turn-Off Delay Time td(off)
- 52.4
- Fall Time tf
- 23.6
- Reverse Recovery Time trr
- 44 ns
- Reverse Recovery Charge Qrr
- 212 nC
Performance
- Drain-Source Voltage
- 100 V
- Gate-Source Voltage
- ±20 V
- Continuous Drain Current1(Package Limited) TC=25℃
- 60
- Avalanche Current
- 45 A
- Thermal Resistance from Junction-to-Ambient1 RθJA
- 49 °C/W
- Thermal Resistance from Junction-to-Case1 RθJC
- 0.98 °C/W
- Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA
- 100 --V
- Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250µA
- 1.4 1.82.4V
- Gate Resistance Rg VDS = 0V, VGS =0V, f =
- 1MHz 1.2-Ω
- Gate-body Leakage Current lGSS VDS = 0V, VGS = ±20V
- ±100 nA
- Gate Resistance Rg VDS = 0V, VGS =0V, f =1MHz
- 1.2 Ω
- Diode Forward Voltage2 VSD IS = 20A, VGS = 0V
- 1.2 V
- Continuous Source Current1,5 IS VG=VD=0V , Force Current
- 129 A
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.