onsemi / Thyristors (SCR)
ULN2003ADR2G
Discrete Semiconductor
COMPONENT PROFILE
onsemiThyristors (SCR)ULN2003ADR2G
Refer to manufacturer for product imagery
01 / PRODUCT INFORMATION
Product overview
Discrete Semiconductor
- Manufacturer
- onsemi
- Part number
- ULN2003ADR2G
- Category
- Thyristors (SCR)
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
02 / TECHNICAL DETAILS
Technical parameters
28 parametersConstruction
- ULN2003A −2
- 0 to +85
- ULQ2003A −4
- 0 to +85
- Case 751B, D Suffix
- 100
- Human Body Model (HBM)
- 2000
- Machine Model (MM)
- 400
- Charged Device Model (CDM)
- 1500
- (VO = 50 V, TA = +85 °C)
- 100
- (VO = 50 V, TA = +25 °C)
- 50
- (IC = 350 mA, IB = 500 mA)
- 1.1
- (IC = 200 mA, IB = 350 mA)
- 0.95
- (IC = 100 mA, IB = 250 mA)
- 0.85
- (VI = 3.85 V)
- 0.93
- (VCE = 2.0 V, IC = 200 mA)
- 2.4
- (VCE = 2.0 V, IC = 250 mA)
- 2.7
- (VCE = 2.0 V, IC = 300 mA)
- 3.0
- Input Capacitance
- 15 pF
- Turn-On Delay Time ton
- 0.25 ms
- Turn-Off Delay Time toff
- 0.25 ms
- (VR = 50 V) TA = +85 °C
- 100
Performance
- Output Voltage
- 50 V
- Input Voltage
- 30 V
- Collector Current - Continuous
- 500 mA
- Base Current - Continuous
- 25 mA
- Junction Temperature
- 150 °C
- Input Current - Off Condition II(off)
- 100 mA
- DC Current Gain hFE
- 1000 −
- Clamp Diode Leakage Current TA = +25 °C
- 50 mA
- Clamp Diode Forward Voltage
- 1.5 V
03 / RESOURCES
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.