STM / Bipolar Transistors (BJT)
TIP102
Discrete Semiconductor / IC
COMPONENT PROFILE
STMBipolar Transistors (BJT)TIP102
Refer to manufacturer for product imagery
01 / PRODUCT INFORMATION
Product overview
Discrete Semiconductor / IC
- Manufacturer
- STM
- Part number
- TIP102
- Category
- Bipolar Transistors (BJT)
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
02 / TECHNICAL DETAILS
Technical parameters
20 parametersConstruction
- P tot Total Dissipation at T case ≤ 25 o
- 80 W
- T amb ≤ 25
- 2 W
- I CEO Collector Cut-off V CE = 50
- 50 µA
- I CBO Collector Cut-off V CB = 100
- 50 µA
- VCEO(sus) * Collector-Emitter I C = 30 mA
- 100 V
- V CE(sat) * Collector-Emitter IC = 3 A I B = 6 mA
- 2 V
- IC = 8 A V CE = 4
- 200
Performance
- V CBO Collector-Base Voltage (I E = 0)
- 100 V
- V CEO Collector-Emitter Voltage (I B = 0)
- 100 V
- V EBO Emitter-Base Voltage (I C = 0)
- 5 V
- IC Collector Current
- 8 A
- I CM Collector Peak Current
- 15 A
- IB Base Current
- 1 A
- T stg Storage Temperature -6
- 5 to 150 C
- Tj Max. Operating Junction Temperature
- 150 C
- I EBO Emitter Cut-off Current V EB = 5
- 8 mA
- Saturation Voltage IC = 8 A I B = 80 mA
- 2.5 V
- V BE * Base-Emitter Voltage IC = 8 A V CE = 4
- 2.8 V
- h FE * DC Current Gain IC = 3 A V CE = 4
- 20000
- VF * Forward Voltage of I F = - I C = 10
- 2.8 V
03 / RESOURCES
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.