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STM / MOSFETs

STTH6006W

Discrete Semiconductor / IC

New & Original Prototype to volume sourcing
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COMPONENT PROFILE
STMMOSFETs
STTH6006W
Refer to manufacturer for product imagery
01 / PRODUCT INFORMATION

Product overview

Discrete Semiconductor / IC

Manufacturer
STM
Part number
STTH6006W
Category
MOSFETs
Condition
New & Original
Lifecycle
Confirm with manufacturer
Lead time / MOQ
Confirm with quotation
02 / TECHNICAL DETAILS

Technical parameters

8 parameters

Construction

Rth(j-c) Junction to case
0.75 °C/W
tfr Forward recovery time
500 ns

Performance

VRRM Repetitive peak reverse voltage
600 V
IF(RMS) RMS forward current
90 A
IF(AV) Average forward current, δ = 0.5 Tc = 95°
60 A
Tj Maximum operating junction temperature
175 °C
IRM Reverse recovery current
10.5
VFP Forward recovery voltage
3 V
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03 / RESOURCES

Specifications & documentation

Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.

Official product pageProduct information from the manufacturer Official datasheetTechnical specifications and reference material

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