Product overview
STM MOSFETs STP15N95K5 is a genuine original component suitable for circuit design and volume procurement. We supply full specifications, datasheets and flexible pricing, supporting both prototype and long-term supply.
- Manufacturer
- STM
- Part number
- STP15N95K5
- Category
- MOSFETs
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
24 parametersConstruction
- VGS = 0 V, VDS = 950
- 1
- VGS = 0 V, VDS = 950 V, TC = 125 °C
- 50
- Ciss Input capacitance
- 855 pF
- Coss Output capacitance VDS = 100 V, f = 1 MHz, VGS = 0
- 65 pF
- Crss Reverse transfer capacitance
- 1 pF
- Co(tr)
- 104 pF
- Co(er)
- 38 pF
- Qg Total gate charge
- 30 nC
- Gate-drain charge
- 22 nC
- td(on) Turn-on delay time VDD = 475 V, ID = 6 A
- 23 ns
- tr Rise time RG = 4.7 Ω, VGS = 10
- 20 ns
- tf Fall time Figure 23. Switching time waveform)
- 11 ns
- trr Reverse recovery time ISD = 12 A, di/dt = 100 A/µs
- 444 ns
- Qrr Reverse recovery charge VDD = 60
- 7 µC
- Qrr Reverse recovery charge VDD = 60 V, TJ = 150 °C
- 9.2 µC
Performance
- VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA 3
- 4 V
- V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA
- 950 V
- IGSS Gate-body leakage current VDS = 0 V, VGS = ±20
- ±10 µA
- VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA
- 4 V
- RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 6
- 410 mΩ
- Rg Intrinsic gate resistance f = 1 MHz, ID = 0
- 6 Ω
- ISD Source-drain current
- 12 A
- ISDM(1) Source-drain current (pulsed)
- 48 A
- VSD(2) Forward on voltage VGS = 0 V, ISD = 12
- 1.5 V
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.