Product overview
STM MOSFETs STP10NK80ZFP is a genuine original component suitable for circuit design and volume procurement. We supply full specifications, datasheets and flexible pricing, supporting both prototype and long-term supply.
- Manufacturer
- STM
- Part number
- STP10NK80ZFP
- Category
- MOSFETs
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
25 parametersConstruction
- VGS = 0 V, VDS = 800
- 1
- RDS(on) VGS = 10 V, ID = 4.5 A 780 9
- 00
- V(BR)DSS ID = 1 mA, VGS = 0
- 800 V
- RDS(on) VGS = 10 V, ID = 4.5
- 780 mΩ
- Ciss Input capacitance
- 2180 pF
- Coss Output capacitance
- 205 pF
- Crss Reverse transfer capacitance
- 38 pF
- Qg Total gate charge VDD = 640 V, ID = 9 A
- 72 nC
- Qgs Gate-source charge VGS = 0 to 10
- 12.5 nC
- Qgd Gate-drain charge circuit for gate charge
- 37 nC
- td(on) Turn-on delay time VDD = 400 V, ID = 4.5 A
- 30 ns
- tr Rise time RG = 4.7 Ω, VGS = 10
- 20 ns
- td(off) Turn-off delay time (see the Figure 17. Test
- 65 ns
- tf Fall time Figure 22. Switching time
- 17 ns
- STP10NK80Z, STP10NK80
- 80Z
- trr Reverse recovery time ISD = 9 A, di/dt = 100 A/μs
- 645 ns
- Qrr Reverse recovery charge VDD = 45 V, TJ = 150 °C
- 6.4 μC
Performance
- current
- 50
- IGSS Gate body leakage current VDS = 0 V, VGS = ±20 V ±
- 10
- IGSS Gate body leakage current VDS = 0 V, VGS = ±20
- ±10 µA
- VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA
- 3.75 V
- ISD Source-drain current
- 9 A
- ISDM (1) Source-drain current (pulsed)
- 36 A
- VSD (2) Forward on voltage ISD = 9 A, VGS = 0
- 1.6 V
- IRRM Reverse recovery current
- 20 A
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.