COMPONENT PROFILE
STMMOSFETsSTF13N65M2
Refer to manufacturer for product imagery
01 / PRODUCT INFORMATION
Product overview
STM MOSFETs STF13N65M2 is a genuine original component suitable for circuit design and volume procurement. We supply full specifications, datasheets and flexible pricing, supporting both prototype and long-term supply.
- Manufacturer
- STM
- Part number
- STF13N65M2
- Category
- MOSFETs
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
02 / TECHNICAL DETAILS
Technical parameters
34 parametersConstruction
- PTOT Total power dissipation at TC = 25 °C
- 25 W
- VISO
- 2.5 kV
- dv/dt(3) MOSFET dv/dt ruggedness
- 50 V/ns
- VGS = 0 V, VDS = 650
- 1
- VGS = 0 V, VDS = 650 V, TC = 125 °C
- 100
- Ciss Input capacitance
- 590 pF
- Coss Output capacitance VDS= 100 V, f = 1 MHz, VGS = 0
- 27.5 pF
- Crss Reverse transfer capacitance
- 1.1 pF
- Qg Total gate charge
- 17 nC
- Qgs Gate-source charge (see Figure 14. Test circuit for gate
- 3.3 nC
- Gate-drain charge
- 7 nC
- td(on) Turn-on delay time VDD = 325 V, ID = 5 A
- 11 ns
- tr Rise time RG = 4.7 Ω, VGS = 10
- 7.8 ns
- tf Fall time Figure 18. Switching time waveform)
- 12 ns
- trr Reverse recovery time ISD = 10 A, di/dt = 100 A/µs
- 312 ns
- Qrr Reverse recovery charge VDD = 60
- 2.7 µC
- Qrr Reverse recovery charge VDD = 60 V, TJ = 150 °C
- 4.1 µC
Performance
- VGS Gate-source voltage
- ±25 V
- Drain current (continuous) at TC = 25 °C
- 10
- Drain current (continuous) at TC = 100 °C
- 6.3
- IDM(1) Drain current (pulsed)
- 40 A
- dv/dt(2) Peak diode recovery voltage slope
- 15 V/ns
- RthJC Thermal resistance, junction-to-case
- 5 °C/W
- RthJA Thermal resistance, junction-to-ambient
- 62.5 °C/W
- VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2
- 3 4V
- RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 5
- 370 430mΩ
- V(BR)DSS Drain-source breakdown voltage VGS= 0 V, ID = 1 mA
- 650 V
- IGSS Gate-body leakage current VDS = 0 V, VGS = ±25
- ±10 µA
- VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA
- 3 V
- Rg Intrinsic gate resistance f = 1 MHz, ID = 0
- 6.5 Ω
- ISD Source-drain current
- 10 A
- ISDM (1) Source-drain current (pulsed)
- 40 A
- VSD (2) Forward on voltage VGS = 0 V, ISD = 10
- 1.6 V
- IRRM Reverse recovery current
- 17.5 A
03 / RESOURCES
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.