TOSHIBA / MOSFETs
SSM3K35AMFV,L3F
Discrete Semiconductor / IC
COMPONENT PROFILE
TOSHIBAMOSFETsSSM3K35AMFV,L3F
Refer to manufacturer for product imagery
01 / PRODUCT INFORMATION
Product overview
Discrete Semiconductor / IC
- Manufacturer
- TOSHIBA
- Part number
- SSM3K35AMFV,L3F
- Category
- MOSFETs
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
02 / TECHNICAL DETAILS
Technical parameters
10 parametersConstruction
- Type
- N-channel MOSFET
- Power Dissipation (PD)
- 0.15 W
- RDS(on)
- 1.1 Ω @VGS=4.5V
- Gate Threshold (Vth)
- 0.35 ~ 1.0 V
- Input Capacitance (Ciss)
- 18 pF
- Total Gate Charge (Qg)
- 0.34 nC
- Package
- SOT-723 (VESM)
Performance
- Drain-Source Voltage (VDSS)
- 20 V
- Gate-Source Voltage (VGSS)
- ±10 V
- Drain Current (ID)
- 250 mA
03 / RESOURCES
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.