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TOSHIBA / MOSFETs

SSM3K15AMFV,L3F(T

Discrete Semiconductor / IC

New & Original Prototype to volume sourcing
COMPONENT PROFILE
TOSHIBAMOSFETs
SSM3K15AMFV,L3F(T
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Product overview

Discrete Semiconductor / IC

Manufacturer
TOSHIBA
Part number
SSM3K15AMFV,L3F(T
Category
MOSFETs
Condition
New & Original
Lifecycle
Confirm with manufacturer
Lead time / MOQ
Confirm with quotation

Technical parameters

9 parameters

Construction

Type
N-channel MOSFET
Power Dissipation (PD)
0.15 W
RDS(on)
6.0 Ω @VGS=2.5V, 3.6 Ω @VGS=4V
Gate Threshold (Vth)
0.8 ~ 1.5 V
Input Capacitance (Ciss)
13.5 pF
Package
SOT-723 (VESM)

Performance

Drain-Source Voltage (VDSS)
30 V
Gate-Source Voltage (VGSS)
±20 V
Drain Current (ID)
100 mA

Specifications & documentation

Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.

Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.