SS8050 SOT323
Changjiang (CJ) SS8050 SOT323 (bipolar junction transistor (BJT)) — genuine original power discrete device. Voltage rating, current and thermal-resistance parameters are specified in the official Datasheet. Inquiries and samples are welcome.
- Package
- SOT-23
Product overview
Changjiang (CJ) SS8050 SOT323 (bipolar junction transistor (BJT)) — genuine original power discrete device. Voltage rating, current and thermal-resistance parameters are specified in the official Datasheet. Inquiries and samples are welcome.
- Manufacturer
- CHANGJING
- Part number
- SS8050 SOT323
- Category
- Bipolar Transistors (BJT)
- Package
- SOT-23
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
9 parametersConstruction
- Type
- NPN Transistor
- Collector Power Dissipation (PC)
- 300 mW
- Transition Frequency (fT)
- 100 MHz
- Package
- SOT-323
Performance
- Collector-Base Voltage (VCBO)
- 40 V
- Collector-Emitter Voltage (VCEO)
- 25 V
- Emitter-Base Voltage (VEBO)
- 5 V
- Collector Current (IC)
- 1.5 A
- DC Current Gain (hFE)
- 120 ~ 400
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.