CHANGJING / Schottky Diodes
SS8050/CJ
CHANGJING · Schottky Diodes
COMPONENT PROFILE
CHANGJINGSchottky DiodesSS8050/CJ
Refer to manufacturer for product imagery
01 / PRODUCT INFORMATION
Product overview
CHANGJING Schottky Diodes SS8050/CJ is a genuine original component suitable for circuit design and volume procurement. We supply full specifications, datasheets and flexible pricing, supporting both prototype and long-term supply.
- Manufacturer
- CHANGJING
- Part number
- SS8050/CJ
- Category
- Schottky Diodes
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
02 / TECHNICAL DETAILS
Technical parameters
18 parametersConstruction
- PC Collector Power Dissipation
- 300 mW
- hFE(1) VCE=1V, IC= 100mA
- 400
- hFE(2) VCE=1V, IC= 800mA
- 40
- Transition frequency fT
- 100 MHz
- Range 120-200 200-350
- 300-400
Performance
- VCBO Collector-Base Voltage
- 40 V
- VCEO Collector-Emitter Voltage
- 25 V
- VEBO Emitter-Base Voltage
- 5 V
- IC Collector Current
- 1.5 A
- RΘJA Thermal Resistance From Junction To Ambient
- 417 ℃/W
- TJ,Tstg Operation Junction and Storage Temperature Range -5
- 5～+150 ℃
- Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0
- 40 V
- Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0
- 25 V
- Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0
- 5 V
- Collector cut-off current ICBO VCB=40V, IE=0
- 0.1 μA
- Collector cut-off current ICEO VCE=20V, IE=0
- 0.1 μA
- Emitter cut-off current IEBO VEB= 5V, IC=0
- 0.1 μA
- Base-emitter saturation voltage VBE(sat) IC=800mA, IB= 80mA
- 1.2 V
03 / RESOURCES
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.