SKYSEMI / MOSFET
SS022N10M6S
The SKYSEMI SS022N10M6S is an N-channel power MOSFET in a TO263-7 package, rated for 100V drain-source voltage and 240A continuous drain current with a low on-resistance of 1.5mΩ (typ), 2.2mΩ (max).
COMPONENT PROFILE
SKYSEMIMOSFETSS022N10M6S
Refer to manufacturer for product imagery
- Package
- TO263-7
01 / PRODUCT INFORMATION
Product overview
The SKYSEMI SS022N10M6S is an N-channel power MOSFET in a TO263-7 package, rated for 100V drain-source voltage and 240A continuous drain current with a low on-resistance of 1.5mΩ (typ), 2.2mΩ (max).
- Manufacturer
- SKYSEMI
- Part number
- SS022N10M6S
- Category
- MOSFET
- Package
- TO263-7
- Packaging
- Tape & Reel
- Condition
- New & Original
- Compliance
- RoHS Compliant
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
02 / TECHNICAL DETAILS
Technical parameters
5 parametersConstruction
- Type
- N-MOSFET
- VDSS
- 100 V
- ID
- 305 A
- RDS(on).typ
- 1.5 mΩ
- Package
- TO-263-7
03 / RESOURCES
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.