COMPONENT PROFILE
InfineonMOSFETsSPA11N65C3
Refer to manufacturer for product imagery
01 / PRODUCT INFORMATION
Product overview
Infineon MOSFETs SPA11N65C3 is a genuine original component suitable for circuit design and volume procurement. We supply full specifications, datasheets and flexible pricing, supporting both prototype and long-term supply.
- Manufacturer
- Infineon
- Part number
- SPA11N65C3
- Category
- MOSFETs
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
02 / TECHNICAL DETAILS
Technical parameters
37 parametersConstruction
- Avalanche energy, single pulse EAS 340
- 340 mJ
- Power dissipation, T C = 25°C Ptot 125
- 33 W
- Rev. 2.91 Page 1
- 2009-11-30
- SPP11N65C3,SPA1
- 1N65C
- SPI1
- 1N65C
- Drain-Source avalanche V(BR)DS V GS=0V, I D=4A
- 730
- Rev. 2.91 Page 2
- 2009-11- 30
- Transconductance g fs V DS≥2*I D*RDS(on)max
- 8.3 S
- Input capacitance Ciss V GS=0V, VDS=25V
- 1200 pF
- Output capacitance Coss f=1MHz
- 390
- Reverse transfer capacitance Crss
- 30
- Effective output capacitance,4) Co(er) V GS=0V
- 45
- Effective output capacitance,5) Co(tr)
- 85
- Turn-on delay time td(on) V DD=380V, V GS=0/10V
- 10 ns
- Rise time tr ID=11A
- 5
- Turn-off delay time td(off) RG=6.8Ω
- 44
- Fall time tf
- 5
- Gate to source charge Qgs VDD =480V, ID =11A
- 5.5 nC
- Gate to drain charge Qgd
- 22
- Gate charge total Qg VDD =480V, ID =11A
- 45
- Rev. 2.91 Page 3
- 2009-11-30
- SPP
- 11N65C3,SPA11N65C
- Reverse recovery time trr VR =480V, IF =IS
- 400 ns
- Reverse recovery charge Qrr diF /dt=100A/µs
- 6 µC
- Peak rate of fall of reverse dirr /dt Tj =25°C
- 1200 A/µs
- Rth1 0.015
- 0.15
- Rth2 0.03
- 0.03
Performance
- Avalanche current, repetitive tAR limited by T jmax IAR 4
- 4 A
- Gate source voltage VGS ±20
- ±20 V
- Gate source voltage AC (f >1Hz) VGS ±30
- ±30
- Operating and storage temperature Tj , Tstg -5
- 5...+150 °C
- Drain Source voltage slope dv/dt
- 50 V/ns
- Gate threshold voltage VGS(th) ID=500µA, VGS=VDS 2.1
- 3
- Gate input resistance RG f=1MHz, open drain
- 0.86
- Gate plateau voltage V(plateau) VDD =480V, ID =11A
- 5.5 V
- Inverse diode forward voltage VSD VGS =0V, IF =IS
- 1 V
- Peak reverse recovery current Irrm
- 41 A
03 / RESOURCES
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.