REASUNOS / MOSFET
RSU2N65D
REASUNOS RSU2N65D N-Channel MOSFET, a 650V 1.8A 650V N-channel MOSFET for low-power SMPS in a TO-252 package for power switching applications.
COMPONENT PROFILE
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TO-252 · Generic package illustration
Based on the catalogue package field; not verified for this part. Check manufacturer documentation for dimensions, polarity and pinout.View part documentation ↓Package reference · Not a dimension drawing
- Package
- TO-252
01 / PRODUCT INFORMATION
Product overview
REASUNOS RSU2N65D N-Channel MOSFET, a 650V 1.8A 650V N-channel MOSFET for low-power SMPS in a TO-252 package for power switching applications.
- Manufacturer
- REASUNOS
- Part number
- RSU2N65D
- Category
- MOSFET
- Package
- TO-252
- Packaging
- Tape & Reel
- Condition
- New & Original
- Compliance
- RoHS Compliant
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
02 / TECHNICAL DETAILS
Technical parameters
10 parametersConstruction
- RDS(on)
- 2.2Ω@10V
- Gate Charge (Qg)
- 3nC@10V
- Pd - Power Dissipation
- 22W
- Ciss - Input Capacitance
- 183pF
- Package
- TO-252
- Number
- 1 N-channel
Performance
- Drain to Source Voltage
- 650V
- Current - Continuous Drain (Id)
- 1.8A
- Gate Threshold Voltage (Vgs(th))
- 3V
- Operating Temperature
- -55℃~+150℃
03 / RESOURCES
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.