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ROHM / MOSFETs

RD3H080SPTL1

Discrete Semiconductor

New & Original Prototype to volume sourcing
COMPONENT PROFILE
ROHMMOSFETs
RD3H080SPTL1
Refer to manufacturer for product imagery

Product overview

Discrete Semiconductor

Manufacturer
ROHM
Part number
RD3H080SPTL1
Category
MOSFETs
Condition
New & Original
Lifecycle
Confirm with manufacturer
Lead time / MOQ
Confirm with quotation

Technical parameters

6 parameters

Construction

Power dissipation PD*3
15 W

Performance

Drain - Source voltage
45 V
Continuous drain current ID*1
±8 A
Gate - Source voltage
±20 V
Junction temperature Tj
150 ℃
Operating junction and storage temperature range Tstg -5
5 to +150 ℃

Specifications & documentation

Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.

Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.