PBSS5350Z,135
NXP Semiconductors PBSS5350Z,135 (Bipolar Transistor BJT) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; its Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.
- Package
- SOT-223
Product overview
NXP Semiconductors PBSS5350Z,135 (Bipolar Transistor BJT) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; its Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.
- Manufacturer
- NXP
- Part number
- PBSS5350Z,135
- Category
- Bipolar Transistors (BJT)
- Package
- SOT-223
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
7 parametersConstruction
- 类型
- 50 V, 3 A PNP low VCEsat transistor
- 极性
- PNP
- NPN Complement
- PBSS4350Z
- 特点
- Low collector-emitter saturation voltage VCEsat; High collector current gain (hFE) at high IC
- Package
- SOT223 (SC-73)
Performance
- Collector-Emitter Voltage VCEO
- 50 V
- Collector Current IC
- 3 A
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.