onsemi / Bipolar Transistors (BJT)
P2N2222A
Discrete Semiconductor
COMPONENT PROFILE
onsemiBipolar Transistors (BJT)P2N2222A
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01 / PRODUCT INFORMATION
Product overview
Discrete Semiconductor
- Manufacturer
- onsemi
- Part number
- P2N2222A
- Category
- Bipolar Transistors (BJT)
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
02 / TECHNICAL DETAILS
Technical parameters
38 parametersConstruction
- Total Device Dissipation @ TA = 25°C
- 625
- Total Device Dissipation @ TC = 25°C
- 1.5 TO−92
- (IC = 10 mAdc, IB = 0)
- 40
- (IE = 10 mAdc, IC = 0)
- 6.0
- (VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
- 10
- (VCB = 60 Vdc, IE = 0)
- 0.01
- (VCB = 60 Vdc, IE = 0, TA = 150°C)
- 10
- (VCE = 10 V)
- 10
- (IC = 0.1 mAdc, VCE = 10 Vdc)
- 35
- (IC = 1.0 mAdc, VCE = 10 Vdc)
- 50
- (IC = 10 mAdc, VCE = 10 Vdc)
- 75
- (IC = 10 mAdc, VCE = 10 Vdc, TA = −55°C)
- 35
- (IC = 150 mAdc, VCE = 10 Vdc) (Note 1)
- 300
- (IC = 150 mAdc, VCE = 1.0 Vdc) (Note 1)
- 50
- (IC = 500 mAdc, VCE = 10 Vdc) (Note 1)
- 40
- (IC = 150 mAdc, IB = 15 mAdc)
- 0.3
- (IC = 500 mAdc, IB = 50 mAdc)
- 1.0
- (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)C
- 300
- (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
- 8.0
- (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
- 25
- (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
- 8.0
- (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
- 1.25
- (IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz)
- 150
- (IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 kW, f = 1.0 kHz)
- 4.0
- Delay Time (VCC = 30 Vdc, VBE(off) = −2.0 Vdc, td
- 10 ns
- Rise Time IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1) tr
- 25 ns
- Storage Time (VCC = 30 Vdc, IC = 150 mAdc, ts
- 225 ns
- Fall Time IB1 = IB2 = 15 mAdc) (Figure 2) tf
- 60 ns
Performance
- Collector −Emitter Voltage
- 40 VdcBASE
- Collector −Base Voltage
- 75 Vdc
- Emitter−Base Voltage
- 6.0 Vdc
- Collector Current − Continuous
- 600 mAdc
- Operating and Storage Junction TJ, Tstg
- −55 to °C
- Temperature Range
- +150
- Thermal Resistance, Junction to Ambient RqJA
- 200
- Thermal Resistance, Junction to Case RqJC
- 83.3 °C/W
- Collector −Base Breakdown Voltage V(BR)CBO
- 75 Vdc
- Emitter Cutoff Current
- 10 Adc
03 / RESOURCES
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.