NCEP6090AGU
NCE Power NCEP6090AGU (MOSFET - SGT (Shielded Gate Trench, SGT-I)) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.
- Package
- DFN5X6-8L
Product overview
NCE Power NCEP6090AGU (MOSFET - SGT (Shielded Gate Trench, SGT-I)) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.
- Manufacturer
- NCE
- Part number
- NCEP6090AGU
- Category
- SGT MOSFETs (SGT-I)
- Package
- DFN5X6-8L
- Packaging
- Reel
- Condition
- New & Original
- Compliance
- Lead Free / Pb-Free
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
30 parametersConstruction
- Maximum Power Dissipation
- 100 W
- Derating factor
- 0.8 W/℃
- Single pulse avalanche energy
- 500 mJ
- VGS=10V, ID=45A
- 2.8 mΩ
- VGS=4.5V, ID=45A
- 3.5 mΩ
- Forward Transconductance gFS VDS=10V,ID=45A
- 40 S
- Input Capacitance Clss
- 4000 PF
- Output Capacitance Coss
- 680 PF
- Reverse Transfer Capacitance Crss
- 23 PF
- Turn-on Delay Time td(on)
- 11 nS
- Turn-on Rise Time tr VDD=30V,ID=45A
- 5 nS
- Turn-Off Delay Time td(off) VGS=10V,RG=4.7Ω
- 56 nS
- Turn-Off Fall Time tf
- 12 nS
- Total Gate Charge Qg
- 67 nC
- Gate-Source Charge Qgs
- 12 nC
- Gate-Drain Charge Qgd
- 8.5 nC
- Reverse Recovery Time trr TJ = 25°C, IF =
- 48 nS
- Reverse Recovery Charge Qrr di/dt = 100A/μs
- 60 nC
Performance
- Drain-Source Voltage
- 60 V
- Gate-Source Voltage
- ±20 V
- Drain Current-Continuous (Silicon Limited)
- 90 A
- Drain Current-Continuous(TC=100℃) ID (100℃)
- 63.6 A
- Operating Junction and Storage Temperature Range TJ,TSTG -5
- 5 To 150 ℃
- Thermal Resistance,Junction-to-Case(Note 2) RθJC
- 1.25 ℃/W
- Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA
- 60 V
- Zero Gate Voltage Drain Current IDSS VDS=60V,VGS=0V
- 1 μA
- Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V
- ±100 nA
- Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA
- 1.7 V
- Diode Forward Voltage (Note 3) VSD VGS=0V,IS=45A
- 1.2 V
- Diode Forward Current
- 90 A
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.