NCEP021NH80GU
NCE Power NCEP021NH80GU (MOSFET - SGT-III (Shielded Gate Trench III)) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.
- Package
- DFN-8 (5x6mm)
Product overview
NCE Power NCEP021NH80GU (MOSFET - SGT-III (Shielded Gate Trench III)) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.
- Manufacturer
- NCE
- Part number
- NCEP021NH80GU
- Category
- SGT-III MOSFETs
- Package
- DFN-8 (5x6mm)
- Packaging
- Tape & Reel
- Condition
- New & Original
- Compliance
- RoHS Compliant
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
30 parametersConstruction
- Maximum Power Dissipation
- 245 W
- Derating factor
- 1.96 W/℃
- Single pulse avalanche energy (Note 1)
- 1076 mJ
- Forward Transconductance gFS VDS=10V,ID=20A
- 60 S
- Input Capacitance Clss
- 4316 pF
- Output Capacitance Coss
- 2032 pF
- Reverse Transfer Capacitance Crss
- 64 pF
- Turn-on Delay Time td(on)
- 15.8 nS
- Turn-on Rise Time tr VDD=40V,ID=20A
- 12.4 nS
- Turn-Off Delay Time td(off) VGS=10V,RG=3Ω
- 34.7 nS
- Turn-Off Fall Time tf
- 18 nS
- Total Gate Charge Qg
- 80 nC
- Gate-Source Charge Qgs
- 29.5 nC
- Gate-Drain Charge Qgd
- 15.8 nC
- Reverse Recovery Time trr TJ = 25°C, IF =20A
- 91 nS
- Reverse Recovery Charge Qrr di/dt = 100A/μs
- 175 nC
Performance
- Drain-Source Voltage
- 80 V
- Gate-Source Voltage
- ±20 V
- Drain Current-Continuous
- 244 A
- Drain Current-Continuous(TC=100℃) ID (100℃)
- 154 A
- Operating Junction and Storage Temperature Range TJ,TSTG -5
- 5 To 150 ℃
- Thermal Resistance,Junction-to-Case RθJC
- 0.51 ℃/W
- Thermal Resistance,Junction-to-Ambient(Note4) RθJA
- 50 ℃/W
- Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA
- 80 V
- Zero Gate Voltage Drain Current IDSS VDS=80V,VGS=0V
- 1 μA
- Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V
- ±100 nA
- Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA
- 3.5 V
- Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=20A
- 1.9 mΩ
- Diode Forward Voltage VSD VGS=0V,IS=20A
- 1.2 V
- Diode Forward Current
- 244 A
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.