Electronic component sourcing & distribution since 2004 richard@fastspeed-ic.com ↗
中文 Upload BOM Request quote
NCE / Trench MOSFETs

NCE9435

NCE Power NCE9435 (MOSFET - Trench) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.

New & Original Prototype to volume sourcing
COMPONENT PROFILE
SOIC-8 generic package illustration, not a part-specific image

Isometric preview; switch to top or 3D.

SOIC-8 · Generic package illustration

Based on the catalogue package field; not verified for this part. Check manufacturer documentation for dimensions, polarity and pinout.View part documentation ↓
Package reference · Not a dimension drawing
Package
SOP-8

Product overview

NCE Power NCE9435 (MOSFET - Trench) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.

Manufacturer
NCE
Part number
NCE9435
Category
Trench MOSFETs
Package
SOP-8
Condition
New & Original
Lifecycle
Confirm with manufacturer
Lead time / MOQ
Confirm with quotation

Technical parameters

22 parameters

Construction

Maximum Power Dissipation
2.5 W
VGS=-10V, ID=
4 mΩ
VGS=-4.5V, ID=
6 mΩ
Forward Transconductance gFS VDS=-15V,ID=-5
7 S
Input Capacitance Clss
9 PF
Output Capacitance Coss
3 PF
Reverse Transfer Capacitance Crss
1 PF
Turn-on Delay Time td(on)
1 nS
Turn-on Rise Time tr VDD=-15V, ID=
1 nS
Turn-Off Delay Time td(off) VGS=-10V,RGEN=
5 nS
Turn-Off Fall Time tf
2 nS
Total Gate Charge Qg
1 nC
Gate-Source Charge Qgs VDS=-15V,ID=-5.1A
2 nC
Gate-Drain Charge Qgd
2 nC

Performance

Drain-Source Voltage
30 V
Gate-Source Voltage
±20 V
Drain Current-Continuous
5.1 A
Drain Current-Pulsed
20 A
Thermal Resistance,Junction-to-Ambient (Note 2) RθJA
50 ℃/W
Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA
33 V
Gate Threshold Voltage VGS(th) VDS=VGS,ID=-25
1 V
Diode Forward Voltage (Note 3) VSD VGS=0V,IS=-5
1A V

Specifications & documentation

Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.

Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.