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NCE / Trench MOSFETs

NCE8205t

NCE Power NCE8205t (MOSFET - Trench) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.

New & Original Prototype to volume sourcing
COMPONENT PROFILE
NCETrench MOSFETs
NCE8205t
Refer to manufacturer for product imagery
Package
SOT-23-6L

Product overview

NCE Power NCE8205t (MOSFET - Trench) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.

Manufacturer
NCE
Part number
NCE8205t
Category
Trench MOSFETs
Package
SOT-23-6L
Packaging
Reel
Condition
New & Original
Compliance
Lead Free / Pb-Free
Lifecycle
Confirm with manufacturer
Lead time / MOQ
Confirm with quotation

Technical parameters

27 parameters

Construction

Maximum Power Dissipation
1.25 W
VGS=4.5V, ID=5A
16.5 mΩ
VGS=2.5V, ID=5A
22 mΩ
Forward Transconductance gFS VDS=5V,ID=5A
10 S
Input Capacitance Clss
550 PF
Output Capacitance Coss
125 PF
Reverse Transfer Capacitance Crss
64 PF
Turn-on Delay Time td(on)
9 nS
Turn-on Rise Time tr VDD=10V,ID=5A
10 nS
Turn-Off Delay Time td(off) VGS=4V,RGEN=10Ω
32 nS
Turn-Off Fall Time tf
24 nS
Total Gate Charge Qg
9.5 nC
Gate-Source Charge Qgs
2.1 nC
Gate-Drain Charge Qgd
1.4 nC

Performance

Drain-Source Voltage
20 V
Gate-Source Voltage
±12 V
Drain Current-Continuous
5 A
Drain Current-Pulsed
25 A
Thermal Resistance,Junction-to-Ambient (Note 2) RθJA
100 ℃/W
Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA
20 V
Zero Gate Voltage Drain Current IDSS VDS=19.5V,VGS=0V
1
Gate-Body Leakage Current IGSS VGS=±12V,VDS=0V
±100 nA
Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 0.5
1.2
Diode Forward Voltage (Note 3) VSD VGS=0V,IS=5A
0.8 V
Diode Forward Current IS
5
Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA
0.7 V
Diode Forward Current
5 A

Specifications & documentation

Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.

Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.