COMPONENT PROFILE
NCEMOSFETsNCE65N230F
Refer to manufacturer for product imagery
01 / PRODUCT INFORMATION
Product overview
N-ChannelSuperJunctionPowerMOSFETⅣ
- Manufacturer
- NCE
- Part number
- NCE65N230F
- Category
- MOSFETs
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
02 / TECHNICAL DETAILS
Technical parameters
11 parametersConstruction
- RDS(ON) @ VGS=10V
- 190 mΩ (Typ.) / 230 mΩ (Max)
- Total Gate Charge Qg
- 19 nC
- Maximum Power Dissipation PD
- 33.3 W
- Package
- TO-220F-3L
Performance
- Drain-Source Voltage VDS
- 650 V
- Gate-Source Voltage VGS
- ±30 V (AC) / ±20 V (DC)
- Continuous Drain Current ID
- 17 A
- Continuous Drain Current (TC=100℃)
- 11.9 A
- Pulsed Drain Current IDM
- 51 A
- Gate Threshold Voltage VGS(th)
- 3 V (min) / 4 V (max)
- Operating Junction Temperature TJ
- -55 ~ +175 ℃
03 / RESOURCES
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.