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NCE / Trench MOSFETs

NCE3415

NCE Power NCE3415 (MOSFET - Trench) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.

New & Original Prototype to volume sourcing
COMPONENT PROFILE
SOT-23 generic package illustration, not a part-specific image

Isometric preview; switch to top or 3D.

SOT-23 · Generic package illustration

Based on the catalogue package field; not verified for this part. Check manufacturer documentation for dimensions, polarity and pinout.View part documentation ↓
Package reference · Not a dimension drawing
Package
SOT-23

Product overview

NCE Power NCE3415 (MOSFET - Trench) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.

Manufacturer
NCE
Part number
NCE3415
Category
Trench MOSFETs
Package
SOT-23
Condition
New & Original
Compliance
Lead Free / Pb-Free
Lifecycle
Confirm with manufacturer
Lead time / MOQ
Confirm with quotation

Technical parameters

25 parameters

Construction

Maximum Power Dissipation
1.4 W
Wuxi NCE Power Co., Ltd Page1
0
VGS=-4.5V, ID=
29 mΩ
VGS=-2.5V, ID=
37 mΩ
Forward Transconductance gFS VDS=-5V,ID=-4A
8 S
Input Capacitance Clss
1181.1 PF
Output Capacitance Coss
121.3 PF
Reverse Transfer Capacitance Crss
114.8 PF
Turn-on Delay Time td(on)
12 nS
Turn-on Rise Time tr VDD=-10V,RL=2
10 nS
Turn-Off Delay Time td(off) VGS=-4.5V,RGEN=
19 nS
Turn-Off Fall Time tf
25 nS
Total Gate Charge Qg
10.2 nC
Gate-Source Charge Qgs
1.3 nC
Gate-Drain Charge Qgd
2.4 nC

Performance

Drain-Source Voltage
20 V
Gate-Source Voltage
±10 V
Drain Current-Continuous
4 A
Drain Current-Pulsed (Note 1)
30 A
Thermal Resistance,Junction-to-Ambient (Note 2) RθJA
89 ℃/W
Zero Gate Voltage Drain Current IDSS VDS=-20V,VGS=0V
1 μA
Gate-Body Leakage Current IGSS VGS=±10V,VDS=0V
±10 μA
Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250
0.65 9V
Diode Forward Voltage (Note 3) VSD VGS=0V,IS=-4A
1. 2V
Diode Forward Current (Note 2)
4 A

Specifications & documentation

Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.

Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.