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NCE / Trench MOSFETs

NCE3401

NCE Power NCE3401 (MOSFET - Trench) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.

New & Original Prototype to volume sourcing
COMPONENT PROFILE
SOT-23 generic package illustration, not a part-specific image

Isometric preview; switch to top or 3D.

SOT-23 · Generic package illustration

Based on the catalogue package field; not verified for this part. Check manufacturer documentation for dimensions, polarity and pinout.View part documentation ↓
Package reference · Not a dimension drawing
Package
SOT-23

Product overview

NCE Power NCE3401 (MOSFET - Trench) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.

Manufacturer
NCE
Part number
NCE3401
Category
Trench MOSFETs
Package
SOT-23
Packaging
Reel
Condition
New & Original
Lifecycle
Confirm with manufacturer
Lead time / MOQ
Confirm with quotation

Technical parameters

26 parameters

Construction

IDM
30 A
Maximum Power Dissipation
1.2 W
VGS=-10V, ID=
48
VGS=-2.5V
72
Forward Transconductance gFS VDS=-5V,ID=-4
10
Input Capacitance Clss
880
VDS=-15V,VGS=
0V
Output Capacitance Coss
105
Reverse Transfer Capacitance Crss
65
Turn-on Delay Time td(on)
7
Turn-on Rise Time tr VDD=-15V,ID=-4
3
Turn-Off Delay Time td(off) VGS=-10V,RGEN=
30
Turn-Off Fall Time tf
12
Total Gate Charge Qg
8.5
Gate-Source Charge Qgs VDS=-15V,ID=-4.2A
1.8
Gate-Drain Charge Qgd
2.7

Performance

Drain-Source Voltage
30 V
Gate-Source Voltage
±12 V
Drain Current-Continuous
4.2 A
Thermal Resistance,Junction-to-Ambient (Note 2) RθJA
104 ℃/W
Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA
30 V
Zero Gate Voltage Drain Current IDSS VDS=-24V,VGS=0V
1 μA
Gate-Body Leakage Current IGSS VGS=±12V,VDS=
±100
Gate Threshold Voltage VGS(th) VDS=VGS,ID=-25
7
Drain-Source On-State Resistance RDS(ON) VGS=-4.5V
56
Diode Forward Voltage (Note 3) VSD VGS=0V,IS=-4
1.2

Specifications & documentation

Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.

Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.