NCE30P12S
NCE Power NCE30P12S (MOSFET - Trench) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.
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SOIC-8 · Generic package illustration
Based on the catalogue package field; not verified for this part. Check manufacturer documentation for dimensions, polarity and pinout.View part documentation ↓- Package
- SOP-8
Product overview
NCE Power NCE30P12S (MOSFET - Trench) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.
- Manufacturer
- NCE
- Part number
- NCE30P12S
- Category
- Trench MOSFETs
- Package
- SOP-8
- Condition
- New & Original
- Compliance
- Lead Free / Pb-Free
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
28 parametersConstruction
- Maximum Power Dissipation (TA=25℃)
- 3
- Maximum Power Dissipation (TA=100℃)
- 1.3
- Single pulse avalanche energy (Note 5)
- 231 mJ
- VGS=-10V, ID=-10A
- 11.5 mΩ
- VGS=-4.5V, ID=-7A
- 15 mΩ
- Forward Transconductance gFS VDS=-10V,ID=-10A
- 20 S
- Input Capacitance Clss
- 2419 PF
- Output Capacitance Coss
- 318 PF
- Reverse Transfer Capacitance Crss
- 262 PF
- Turn-on Delay Time td(on)
- 9 nS
- Turn-on Rise Time tr VDD=-15V, ID=-10A
- 8 nS
- Turn-Off Delay Time td(off) VGS=-10V,RGEN=1Ω
- 28 nS
- Turn-Off Fall Time tf
- 10 nS
- Total Gate Charge Qg
- 44.4 nC
- Gate-Source Charge Qgs VDS=-15V,ID=-10A,VGS=-10V
- 4.6 nC
- Gate-Drain Charge Qgd
- 10 nC
- VSD VGS=0V,IS=-12A
- 1.2 V
Performance
- Drain-Source Voltage
- 30 V
- Gate-Source Voltage
- ±20 V
- Drain Current-Continuous (TA=25℃)
- 12
- Drain Current-Continuous (TA=100℃)
- 8.4
- Drain Current-Pulsed (Note 1)
- 48 A
- Thermal Resistance,Junction-to-Ambient (Note 2) RθJA
- 41.67 ℃/W
- Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA
- 30 V
- Zero Gate Voltage Drain Current IDSS VDS=-30V,VGS=0V
- 1 μA
- Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V
- ±100 nA
- Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA
- 1.5 V
- Diode Forward Current (Note 2)
- 12 A
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.