NCE / MOSFETs
NCE30H15
N-Channel Enhancement Mode Power MOSFET
COMPONENT PROFILE
NCEMOSFETsNCE30H15
Refer to manufacturer for product imagery
01 / PRODUCT INFORMATION
Product overview
N-Channel Enhancement Mode Power MOSFET
- Manufacturer
- NCE
- Part number
- NCE30H15
- Category
- MOSFETs
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
02 / TECHNICAL DETAILS
Technical parameters
12 parametersConstruction
- RDS(ON) @ VGS=10V
- 2.3 mΩ (Typ.) / 3.0 mΩ (Max)
- RDS(ON) @ VGS=4.5V
- 3.2 mΩ (Typ.) / 4.0 mΩ (Max)
- Total Gate Charge Qg
- 114 nC
- Maximum Power Dissipation PD
- 130 W
- Package
- TO-220-3L
Performance
- Drain-Source Voltage VDS
- 30 V
- Gate-Source Voltage VGS
- ±20 V
- Drain Current-Continuous ID
- 150 A
- Drain Current-Continuous (TC=100℃)
- 105 A
- Pulsed Drain Current IDM
- 600 A
- Gate Threshold Voltage VGS(th)
- 1.2 V (min) / 2.5 V (max)
- Operating Junction Temperature TJ
- -55 ~ 175 ℃
03 / RESOURCES
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.