NCE3025Q
NCE Power NCE3025Q (MOSFET - Trench) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.
- Package
- DFN3
Product overview
NCE Power NCE3025Q (MOSFET - Trench) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.
- Manufacturer
- NCE
- Part number
- NCE3025Q
- Category
- Trench MOSFETs
- Package
- DFN3
- Packaging
- Reel
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
30 parametersConstruction
- (TC=25℃)
- 25 A
- (TC=100℃)
- 25 A
- Maximum Power Dissipation (TC=25℃)
- 25 W
- EAS
- 92 mJ
- RθJA
- 60 ℃/W
- VGS=10V, ID=20A
- 4.8
- VGS=4.5V, ID=10A
- 8.2
- Forward Transconductance gFS VDS=5V,ID=5A
- 15 S
- Input Capacitance Clss
- 400 pF
- Output Capacitance Coss
- 205 pF
- Reverse Transfer Capacitance Crss
- 177 pF
- Turn-on Delay Time td(on)
- 9 nS
- Turn-on Rise Time tr VDD=15V,ID=20A
- 8 nS
- Turn-Off Delay Time td(off) VGS=10V,RGEN=6Ω
- 28 nS
- Turn-Off Fall Time tf
- 5 nS
- Total Gate Charge Qg
- 32.3 nC
- Gate-Source Charge Qgs
- 4.9 nC
- Gate-Drain Charge Qgd
- 6.9 nC
- Reverse Recovery Time trr TJ = 25°C, IF=20A
- 27 nS
- Reverse Recovery Charge Qrr di/dt = 100A/μs
- 20 nC
Performance
- Drain-Source Voltage
- 30 V
- Gate-Source Voltage
- ±20 V
- Operating Junction and Storage Temperature Range TJ,TSTG -5
- 5 To 150 ℃
- Thermal Resistance,Junction-to-Case RθJC
- 5 ℃/W
- Drain-Source Breakdown Voltage BVDSS VGS=0V,ID=250μA
- 30 V
- Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V
- 1 μA
- Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V
- ±100 nA
- Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA
- 1.6 V
- Diode Forward Voltage VSD VGS=0V,IS=20A
- 1.2 V
- Diode Forward Current IS
- 25 A
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.