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NCE / Trench MOSFETs

NCE2312A

NCE Power NCE2312A (MOSFET - Trench) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.

New & Original Prototype to volume sourcing
COMPONENT PROFILE
SOT-23 generic package illustration, not a part-specific image

Isometric preview; switch to top or 3D.

SOT-23 · Generic package illustration

Based on the catalogue package field; not verified for this part. Check manufacturer documentation for dimensions, polarity and pinout.View part documentation ↓
Package reference · Not a dimension drawing
Package
SOT-23

Product overview

NCE Power NCE2312A (MOSFET - Trench) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.

Manufacturer
NCE
Part number
NCE2312A
Category
Trench MOSFETs
Package
SOT-23
Condition
New & Original
Lifecycle
Confirm with manufacturer
Lead time / MOQ
Confirm with quotation

Technical parameters

25 parameters

Construction

Maximum Power Dissipation
1.25 W
VGS=2.5V, ID=4.5
20 mΩ
VGS=4.5V, ID=5A
17 mΩ
Forward Transconductance gFS VDS=15V,ID=5A
25 S
Input Capacitance Clss
780 PF
Output Capacitance Coss
140 PF
Reverse Transfer Capacitance Crss
80 PF
Turn-on Delay Time td(on)
9 nS
Turn-on Rise Time tr VDD=10V,ID=1A
30 nS
Turn-Off Delay Time td(off) VGS=4.5V,RGEN=6Ω
35 nS
Turn-Off Fall Time tf
10 nS
Total Gate Charge Qg
11 nC
Gate-Source Charge Qgs VDS=10V,ID=5A,VGS=4.5V
2.3 nC
Gate-Drain Charge Qgd
2.9 nC

Performance

Drain-Source Voltage
20 V
Gate-Source Voltage
±10 V
Drain Current-Continuous
5 A
Drain Current-Pulsed
15 A
Thermal Resistance,Junction-to-Ambient (Note 2) RθJA
100 ℃/W
Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA
22 V
Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V
1 μA
Gate-Body Leakage Current IGSS VGS=±10V,VDS=0V
±100 nA
Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA
0.65 V
Diode Forward Voltage (Note 3) VSD VGS=0V,IS=5A
1.2 V
Diode Forward Current
5 A

Specifications & documentation

Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.

Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.