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NCE / Trench MOSFETs

NCE1216

NCE Power NCE1216 (MOSFET - Trench) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.

New & Original Prototype to volume sourcing
COMPONENT PROFILE
NCETrench MOSFETs
NCE1216
Refer to manufacturer for product imagery
Package
DFN-6 (2x2mm)

Product overview

NCE Power NCE1216 (MOSFET - Trench) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.

Manufacturer
NCE
Part number
NCE1216
Category
Trench MOSFETs
Package
DFN-6 (2x2mm)
Packaging
Tape & Reel
Condition
New & Original
Compliance
RoHS Compliant
Lifecycle
Confirm with manufacturer
Lead time / MOQ
Confirm with quotation

Technical parameters

27 parameters

Construction

IDM
65 A
Maximum Power Dissipation (TC=25℃) PD (TC=25℃)
18 W
Maximum Power Dissipation (TA=25℃) PD (TA=25℃)
2.5 W
RθJA
50 ℃/W
VGS=-4.5V, ID=-6.7A
11.5 mΩ
VGS=-2.5V, ID=-6.2A
14 mΩ
Forward Transconductance gFS VDS=-5V,ID=-6.7A
20 S
Input Capacitance Clss
2700 PF
Output Capacitance Coss
680 PF
Reverse Transfer Capacitance Crss
590 PF
Turn-on Delay Time td(on)
11 nS
Turn-on Rise Time tr VDD=-10V,ID=-1A
35 nS
Turn-Off Delay Time td(off) VGS=-4.5V,RGEN=10Ω
30 nS
Turn-Off Fall Time tf
10 nS
Total Gate Charge Qg
35 nC
Gate-Source Charge Qgs
5 nC
Gate-Drain Charge Qgd
10 nC
IS
16 A

Performance

Drain-Source Voltage
12 V
Gate-Source Voltage
±12 V
Drain Current-Continuous
16 A
Thermal Resistance,Junction-to-Case (Note 2) RθJC
6.9 ℃/W
Drain-Source Breakdown Voltage V(BR) DSS VGS=0V ID=-250μA
12 V
Zero Gate Voltage Drain Current IDSS VDS=-12V,VGS=0V
1 μA
Gate-Body Leakage Current IGSS VGS=±12V,VDS=0V
±100 nA
Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA
0.7 V
Diode Forward Voltage (Note 3) VSD VGS=0V,IS=-8A
1.2 V

Specifications & documentation

Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.

Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.