NCE01P35K
NCE Power NCE01P35K (MOSFET - Trench) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.
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TO-252 · Generic package illustration
Based on the catalogue package field; not verified for this part. Check manufacturer documentation for dimensions, polarity and pinout.View part documentation ↓- Package
- TO-252
Product overview
NCE Power NCE01P35K (MOSFET - Trench) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.
- Manufacturer
- NCE
- Part number
- NCE01P35K
- Category
- Trench MOSFETs
- Package
- TO-252
- Condition
- New & Original
- Compliance
- RoHS Compliant
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
31 parametersConstruction
- Maximum Power Dissipation
- 125 W
- Single pulse avalanche energy (Note 1)
- 368 mJ
- Derating factor
- 0.833 W/℃
- VGS=-10V, ID=-20A
- 30 mΩ
- VGS=-4.5V, ID=-20A
- 32 mΩ
- Forward Transconductance gFS VDS=-10V,ID=-20A
- 50 S
- Input Capacitance Clss
- 720 pF
- Output Capacitance Coss
- 190 pF
- Reverse Transfer Capacitance Crss
- 128 pF
- Turn-on Delay Time td(on)
- 17 nS
- Turn-on Rise Time tr VDD=-50V,ID=-20A
- 80 nS
- Turn-Off Delay Time td(off) VGS=-10V,RGEN=9.1Ω
- 45 nS
- Turn-Off Fall Time tf
- 65 nS
- Total Gate Charge Qg
- 118 nC
- Gate-Source Charge Qgs
- 19.8 nC
- Gate-Drain Charge Qgd
- 22.2 nC
- Reverse Recovery Time trr TJ = 25°C, IF =-20A
- 90 nS
- Reverse Recovery Charge Qrr di/dt = 100A/μs
- 145 nC
- Wuxi NCE Power Co., Ltd Page
- 3
Performance
- Drain-Source Voltage
- 100 V
- Gate-Source Voltage
- ±20 V
- Drain Current-Continuous
- 35 A
- Drain Current-Continuous(TC=100℃) ID (100℃)
- 27 A
- Thermal Resistance,Junction-to-Case RθJC
- 1.2 ℃/W
- Thermal Resistance,Junction-to-Ambient (Note 2) RθJA
- 50 ℃/W
- Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA
- 100 V
- Zero Gate Voltage Drain Current IDSS VDS=-100V,VGS=0V
- 1 μA
- Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V
- ±100 nA
- Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA
- 1.8 V
- Diode Forward Voltage VSD VGS=0V,IS=-20A
- 1.2 V
- Diode Forward Current IS
- 35 A
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.