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NCE / POWER MOSFETS

NCE01P30K

NCE · POWER MOSFETS

New & Original Prototype to volume sourcing
COMPONENT PROFILE
NCEPOWER MOSFETS
NCE01P30K
Refer to manufacturer for product imagery

Product overview

P-Channel MOSFET, 100V, 30A

Manufacturer
NCE
Part number
NCE01P30K
Category
POWER MOSFETS
Condition
New & Original
Compliance
Pb-Free / RoHS
Lifecycle
Confirm with manufacturer
Lead time / MOQ
Confirm with quotation

Technical parameters

12 parameters

Construction

FET Type
P-Channel
RDS(on)
65 mΩ @ 4.5 V (typ 48, max 58)
Gate Charge (Qg)
136 nC @ 10 V
Input Capacitance (Ciss)
3.81 nF
Output Capacitance (Coss)
93 pF
Reverse Transfer Capacitance (Crss)
91 pF
Power Dissipation (Pd)
120 W

Performance

Drain-Source Voltage (VDS)
100 V
Continuous Drain Current (Id)
30 A
Gate Threshold Voltage (Vgs(th))
2.5 V
Gate-Source Voltage (Vgs)
±20 V
Operating Temperature
-55℃ ~ +175℃

Specifications & documentation

Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.

Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.