COMPONENT PROFILE
NEXICSiC MOSFETsN1M120080PK-A
Refer to manufacturer for product imagery
01 / PRODUCT INFORMATION
Product overview
NEXIC SiC MOSFETs N1M120080PK-A is a genuine original component suitable for circuit design and volume procurement. We supply full specifications, datasheets and flexible pricing, supporting both prototype and long-term supply.
- Manufacturer
- NEXIC
- Part number
- N1M120080PK-A
- Category
- SiC MOSFETs
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
02 / TECHNICAL DETAILS
Technical parameters
8 parametersConstruction
- BVDS(V)
- 1200 V
- RDS(on) (mΩ)
- 80 mΩ
- VGS(th)(V) (Typ.)
- 2.7 V
- IDSS(μA)(Typ.)
- 1 μA
- VSD(V)(Typ.)
- 4 V
- TJ(max)(℃)
- 150 ℃
- Package
- TO-247-4
Performance
- Continuous Drain Current(A)(max)
- 36 A
03 / RESOURCES
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.