onsemi / Bipolar Transistors (BJT)
MMBT5551LT1G
Bipolar Transistor
COMPONENT PROFILE
onsemiBipolar Transistors (BJT)MMBT5551LT1G
Refer to manufacturer for product imagery
01 / PRODUCT INFORMATION
Product overview
onsemi Bipolar Transistors (BJT) MMBT5551LT1G is a genuine original component suitable for circuit design and volume procurement. We supply full specifications, datasheets and flexible pricing, supporting both prototype and long-term supply.
- Manufacturer
- onsemi
- Part number
- MMBT5551LT1G
- Category
- Bipolar Transistors (BJT)
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
02 / TECHNICAL DETAILS
Technical parameters
21 parametersConstruction
- Human Body Model
- > 8000
- Machine Model
- > 400
- Substrate (Note 2) @TA = 25 °C
- 300 mW
- (IC = 1.0 mAdc, IB = 0) MMBT5550
- 140
- (IC = 100 mAdc, IE = 0) MMBT5550
- 160
- (IE = 10 mAdc, IC = 0)
- 6.0
- (VCB = 100 Vdc, IE = 0) MMBT5550
- 100 nAdc
- (VCB = 120 Vdc, IE = 0) MMBT5551
- 50
- (VCB = 100 Vdc, IE = 0, TA = 100°C) MMBT5550
- 100 mAdc
- (VCB = 120 Vdc, IE = 0, TA = 100°C) MMBT5551
- 50
- (VEB = 4.0 Vdc, IC = 0)
- 50
- (IC = 1.0 mAdc, VCE = 5.0 Vdc) MMBT5550
- 60
- (IC = 10 mAdc, VCE = 5.0 Vdc) MMBT5550
- 250
- (IC = 50 mAdc, VCE = 5.0 Vdc) MMBT5550
- 20
- (IC = 10 mAdc, IB = 1.0 mAdc) Both Types
- 0.15
- (IC = 50 mAdc, IB = 5.0 mAdc) MMBT5550
- 0.25
- (VCB = 10 V) Both Types
- 50
- (VCB = 75 V)
- 100
Performance
- Emitter −Base Voltage
- 6.0
- Collector Current − Continuous
- 600 mAdc
- Thermal Resistance, Junction−to−Ambient RqJA
- 556 °C/W
03 / RESOURCES
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.