MMBT5551
Changjiang (CJ) MMBT5551 (bipolar junction transistor (BJT)) — genuine original power discrete device. Voltage rating, current and thermal-resistance parameters are specified in the official Datasheet. Inquiries and samples are welcome.
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SOT-23 · Generic package illustration
Based on the catalogue package field; not verified for this part. Check manufacturer documentation for dimensions, polarity and pinout.View part documentation ↓- Package
- SOT-23
Product overview
Changjiang (CJ) MMBT5551 (bipolar junction transistor (BJT)) — genuine original power discrete device. Voltage rating, current and thermal-resistance parameters are specified in the official Datasheet. Inquiries and samples are welcome.
- Manufacturer
- CHANGJING
- Part number
- MMBT5551
- Category
- Bipolar Transistors (BJT)
- Package
- SOT-23
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
11 parametersConstruction
- Polarity
- NPN
- VCBO
- 180 V
- VCEO
- 160 V
- VEBO
- 6 V
- IC
- 600 mA
- PC
- 300 mW
- hFE
- 80 ~ 300 @ VCE=5V
- Transition Frequency
- 100 ~ 300 MHz
- VCE(sat)
- 0.2 V (max) @ IC=50mA
- Package
- SOT-23
Performance
- Operating Temperature
- -55 °C ~ +150 °C
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.