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onsemi / General-Purpose / High-Voltage Bipolar Transistors (BJT, PNP)

MMBT5401LT1G

onsemi MMBT5401LT1G (Bipolar Transistor (BJT) - General Purpose/High Voltage (PNP)) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.

New & Original Prototype to volume sourcing
COMPONENT PROFILE
SOT-23 generic package illustration, not a part-specific image

Isometric preview; switch to top or 3D.

SOT-23 · Generic package illustration

Based on the catalogue package field; not verified for this part. Check manufacturer documentation for dimensions, polarity and pinout.View part documentation ↓
Package reference · Not a dimension drawing
Package
SOT-23

Product overview

onsemi MMBT5401LT1G (Bipolar Transistor (BJT) - General Purpose/High Voltage (PNP)) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.

Manufacturer
onsemi
Part number
MMBT5401LT1G
Category
General-Purpose / High-Voltage Bipolar Transistors (BJT, PNP)
Package
SOT-23
Packaging
Tape & Reel
Condition
New & Original
Compliance
RoHS Compliant
Lifecycle
Confirm with manufacturer
Lead time / MOQ
Confirm with quotation

Technical parameters

22 parameters

Construction

Total Device Dissipation
225
 Semiconductor Components Industries, LLC, 1994
1
MMBT5401L, SMMBT5401L, NSVMMBT5
401L
(IC = −1.0 mAdc, IB = 0)
−150
(IC = −100 mAdc, IE = 0)
−160
(IE = −10 mAdc, IC = 0)
−5.0
(VCB = −120 Vdc, IE = 0)
−50 nAdc
(VCB = −120 Vdc, IE = 0, TA = 100C)
−50 mAdc
(IC = −1.0 mAdc, VCE = −5.0 Vdc)
50
(IC = −10 mAdc, VCE = −5.0 Vdc)
240
(IC = −50 mAdc, VCE = −5.0 Vdc)
50
(IC = −10 mAdc, IB = −1.0 mAdc)
−0.2
(IC = −50 mAdc, IB = −5.0 mAdc)
−0.5
(IC = −10 mAdc, VCE = −10 Vdc, f = 100 MHz)
300
(VCB = −10 Vdc, IE = 0, f = 1.0 MHz)
6.0
(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)
200
(IC = −200 mAdc, VCE = −5.0 Vdc, RS = 10 Wf = 1.0 kHz)
8.0

Performance

Collector −Emitter Voltage
−150 Vdc2LMG
Collector −Base Voltage
−160 Vdc
Emitter −Base Voltage
−5.0 Vdc
Collector Current − Continuous
−500
Thermal Resistance, RqJA
556

Specifications & documentation

Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.

Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.