MMBT2907ALT1G
onsemi MMBT2907ALT1G (Bipolar Transistor (BJT) - General Purpose (PNP)) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.
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SOT-23 · Generic package illustration
Based on the catalogue package field; not verified for this part. Check manufacturer documentation for dimensions, polarity and pinout.View part documentation ↓- Package
- SOT-23
Product overview
onsemi MMBT2907ALT1G (Bipolar Transistor (BJT) - General Purpose (PNP)) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.
- Manufacturer
- onsemi
- Part number
- MMBT2907ALT1G
- Category
- General-Purpose Bipolar Transistors (BJT, PNP)
- Package
- SOT-23
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
33 parametersConstruction
- Substrate, (Note 2) @TA =
- 300
- 25°C
- 2.4 mW/°C
- or equivalent, (Note 4) @TA =
- 350
- (IC = −1.0 mAdc, IB = 0)
- −60
- (IC = −10 mAdc, IB = 0)
- −60
- (VCB = −50 Vdc, IE = 0)
- 0.010
- (VCB = −50 Vdc, IE = 0, TA = 125°C)
- −10
- (IC = −0.1 mAdc, VCE = −10 Vdc)
- 75
- (IC = −1.0 mAdc, VCE = −10 Vdc)
- 100
- (IC = −10 mAdc, VCE = −10 Vdc)
- 100
- (IC = −150 mAdc, VCE = −10 Vdc)
- 300
- (IC = −500 mAdc, VCE = −10 Vdc) (Note 5)
- 50
- (IC = −150 mAdc, IB = −15 mAdc) (Note 5)
- −0.4
- (IC = −500 mAdc, IB = −50 mAdc)
- −1.6
- (IC = −150 mAdc, IB = −15 mAdc)
- −1.3
- Output Capacitance (VCB = −10 Vdc, IE = 0, f = 1.0 MHz) Cobo
- 8.0 pF
- Input Capacitance (VEB = −2.0 Vdc, IC = 0, f = 1.0 MHz) Cibo
- 30
- Turn−On Time ton
- 45
- Delay Time IB1 = −15 mAdc) td
- 10
- Rise Time tr
- 40
- Turn−Off Time toff
- 100
- Storage Time (VCC = −6.0 Vdc, IC = −150 mAdc, ts
- 80
- Fall Time tf
- 30
- Zo = 50 -30 V Zo = 50
- +15 V
- RISE TIME ≤ 2.0 ns RISE TIME ≤ 2.0 ns
- 7
Performance
- Collector −Emitter Voltage
- −60 Vdc
- Collector −Base Voltage
- −60 Vdc
- Emitter −Base Voltage
- −5.0 Vdc
- Collector Current − Continuous
- −600
- Collector Current − Peak (Note 3)
- −1200 mAdc
- Thermal Resistance, Junction−to−Ambient RJA
- 556
- Base Cutoff Current (VCE = −30 Vdc, VEB(off) = −0.5 Vdc)
- −50 nAdc
- Current −Gain − Bandwidth Product (Notes 5, 6), fT
- 200 MHz
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.