MMBT2222ALT1G
onsemi MMBT2222ALT1G (Bipolar Transistor (BJT) - General Purpose (NPN)) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.
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SOT-23 · Generic package illustration
Based on the catalogue package field; not verified for this part. Check manufacturer documentation for dimensions, polarity and pinout.View part documentation ↓- Package
- SOT-23
Product overview
onsemi MMBT2222ALT1G (Bipolar Transistor (BJT) - General Purpose (NPN)) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.
- Manufacturer
- onsemi
- Part number
- MMBT2222ALT1G
- Category
- General-Purpose Bipolar Transistors (BJT, NPN)
- Package
- SOT-23
- Packaging
- Reel
- Condition
- New & Original
- Compliance
- RoHS Compliant
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
28 parametersConstruction
- MMBT2222AL, SMMBT2222AL
- 40
- Substrate (Note 2) TA = 25 °C
- 300 mW
- MMBT2222L, MMBT2222AL
- 22AL
- (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) MMBT2222A, SMMBT2222A
- 10
- (VCB = 60 Vdc, IE = 0) MMBT2222A, SMMBT2222A
- 0.01
- (VCB = 50 Vdc, IE = 0, TA = 125 °C) MMBT2222
- 10
- (VCB = 60 Vdc, IE = 0, TA = 125 °C) MMBT2222A, SMMBT2222A
- 10
- (IC = 0.1 mAdc, VCE = 10 Vdc)
- 35
- (IC = 1.0 mAdc, VCE = 10 Vdc)
- 50
- (IC = 10 mAdc, VCE = 10 Vdc)
- 75
- (IC = 10 mAdc, VCE = 10 Vdc, TA = -55 °C) MMBT2222A only
- 35
- (IC = 150 mAdc, VCE = 10 Vdc) (Note 4)
- 300
- (IC = 150 mAdc, VCE = 1.0 Vdc) (Note 4)
- 50
- (IC = 500 mAdc, VCE = 10 Vdc) (Note 4) MMBT2222
- 30
- MMBT2222A, SMMBT2222A
- 40
- (IC = 150 mAdc, IB = 15 mAdc) MMBT2222
- 0.4
- (IC = 500 mAdc, IB = 50 mAdc) MMBT2222
- 1.6
- (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) MMBT2222
- 250
- (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
- 8.0
- (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) MMBT2222
- 30
- Delay Time (VCC = 30 Vdc, VBE(off) = - 0.5 Vdc, td
- 10
- Rise Time IC = 150 mAdc, IB1 = 15 mAdc) tr
- 25
- Storage Time (VCC = 30 Vdc, IC = 150 mAdc, ts
- 225
- Fall Time IB1 = IB2 = 15 mAdc) tf
- 60
Performance
- Collector Current - Continuous
- 600
- Collector Current - Peak (Note 3)
- 1100
- Thermal Resistance, Junction-to-Ambient RqJA
- 556 °C/W
- Collector Cutoff Current (VCB = 50 Vdc, IE = 0) MMBT2222
- 0.01 mAdc
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.