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onsemi / SWITCHING DIODES

MMBD914LT1G

onsemi · SWITCHING DIODES

New & Original Prototype to volume sourcing
COMPONENT PROFILE
onsemiSWITCHING DIODES
MMBD914LT1G
Refer to manufacturer for product imagery

Product overview

High-Speed Switching Diode, 100V, 200mA

Manufacturer
onsemi
Part number
MMBD914LT1G
Category
SWITCHING DIODES
Condition
New & Original
Compliance
Pb-Free, Halogen Free/BFR Free, RoHS Compliant
Lifecycle
Confirm with manufacturer
Lead time / MOQ
Confirm with quotation

Technical parameters

10 parameters

Construction

Total Device Dissipation P_D
225 mW (FR-5) / 300 mW (Alumina)
Diode Capacitance C_T
4.0 pF (max)
Reverse Recovery Time t_rr
4.0 ns (max)

Performance

Reverse Voltage V_R
100 V
Forward Current I_F
200 mA
Peak Forward Surge Current I_FSM
1.0 A (t=1s), 2.0 A (1/C0109sec)
Reverse Breakdown Voltage V_BR
100 V (min)
Reverse Leakage Current I_R
25 nA (VR=20V), 5.0 µA (VR=75V)
Forward Voltage V_F
1.0 V (max, IF=10mA)
Junction and Storage Temperature
-55 to +150 °C

Specifications & documentation

Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.

Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.