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onsemi / Power Bipolar Transistors (BJT, NPN)

MJE182G

onsemi MJE182G (Bipolar Transistor (BJT) - Power (NPN)) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.

New & Original Prototype to volume sourcing
COMPONENT PROFILE
TO-220 generic package illustration, not a part-specific image

Isometric preview; switch to top or 3D.

TO-220 · Generic package illustration

Based on the catalogue package field; not verified for this part. Check manufacturer documentation for dimensions, polarity and pinout.View part documentation ↓
Package reference · Not a dimension drawing
Package
TO-225-3

Product overview

onsemi MJE182G (Bipolar Transistor (BJT) - Power (NPN)) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.

Manufacturer
onsemi
Part number
MJE182G
Category
Power Bipolar Transistors (BJT, NPN)
Package
TO-225-3
Packaging
Bulk
Condition
New & Original
Compliance
RoHS Compliant
Lifecycle
Confirm with manufacturer
Lead time / MOQ
Confirm with quotation

Technical parameters

30 parameters

Construction

ESD − Human Body Model
3B
 Semiconductor Components Industries, LLC, 2013
1
MJE170G, MJE180G −
0.1 mAdc
MJE171G, MJE181G −
0.1
MJE172G, MJE182G −
0.1 Adc
(VBE = 7.0 Vdc, IC = 0) −
0.1
(IC = 100 mAdc, VCE = 1.0 Vdc) 50
250
(IC = 500 mAdc, IB = 50 mAdc) −
0.3
(IC = 1.5 Adc, IB = 150 mAdc) −
0.9
(IC = 3.0 Adc, IB = 600 mAdc) −
1.7
(IC = 500 mAdc, VCE = 1.0 Vdc) −
1.2
MJE171G/MJE172G −
60
MJE181G/MJE182G −
40
(VBE = 7.0 Vdc, IC = 0)
0.1
(IC = 100 mAdc, VCE = 1.0 Vdc)
250
(IC = 500 mAdc, VCE = 1.0 Vdc)
30
(IC = 1.5 Adc, VCE = 1.0 Vdc)
12
(IC = 500 mAdc, IB = 50 mAdc)
0.3
(IC = 1.5 Adc, IB = 150 mAdc)
0.9
(IC = 3.0 Adc, IB = 600 mAdc)
1.7
MJE171G/MJE172G
60
MJE181G/MJE182G
40

Performance

Emitter−Base Voltage
7.0 Vdc
Collector Current − Continuous
3.0 Adc
Collector Current − Peak
6.0 AdcYWW
Base Current
1.0
Operating and Storage Junction TJ, Tstg −6
5 to +150 _C
Thermal Resistance, Junction−to−Case RqJC
10 C/W
Thermal Resistance, Junction−to−Ambient RqJA
83.4 C/W
Current−Gain − Bandwidth Product (Note 1) fT
50 MHz

Specifications & documentation

Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.

Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.