onsemi / MEDIUM-POWER BIPOLAR TRANSISTORS

MJD45H11T4G

Name: MJD45H11T4G onsemi
Brand: onsemi
SKU: mjd45h11t4g
Availability: InStock

onsemi · MEDIUM-POWER BIPOLAR TRANSISTORS

New & Original Prototype to volume sourcing

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COMPONENT PROFILE

onsemiMEDIUM-POWER BIPOLAR TRANSISTORS

MJD45H11T4G

Refer to manufacturer for product imagery

01 / PRODUCT INFORMATION

Product overview

PNP 80V 8A Power Transistor

Manufacturer: onsemi
Part number: MJD45H11T4G
Category: MEDIUM-POWER BIPOLAR TRANSISTORS
Condition: New & Original
Compliance: ROHS3 Compliant, REACH Unaffected; Pb-Free
Lifecycle: Confirm with manufacturer
Lead time / MOQ: Confirm with quotation

02 / TECHNICAL DETAILS

Technical parameters

11 parameters

Construction

Transistor Type: PNP
VCE(sat) Max @ Ib, Ic: 1 V @ 400mA, 8A
Power - Max: 1.75 W
Frequency - Transition: 90MHz
Package / Case: TO-252-3, DPAK
Supplier Device Package: DPAK

Performance

Collector Current (Ic) (Max): 8 A
Collector-Emitter Breakdown Voltage (VCEO): 80 V
DC Current Gain (hFE) Min @ Ic, Vce: 40 @ 4A, 1V
Operating Temperature: -55°C ~ 150°C (TJ)
Collector Cutoff Current (Max): 1µA

Moisture sensitivity level (MSL): 1

03 / RESOURCES

Specifications & documentation

Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.

Official product pageProduct information from the manufacturer Official datasheetTechnical specifications and reference material

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