onsemi / MEDIUM-POWER BIPOLAR TRANSISTORS
MJD44H11T4G
onsemi · MEDIUM-POWER BIPOLAR TRANSISTORS
COMPONENT PROFILE
onsemiMEDIUM-POWER BIPOLAR TRANSISTORSMJD44H11T4G
Refer to manufacturer for product imagery
01 / PRODUCT INFORMATION
Product overview
NPN 80V 8A Power Transistor
- Manufacturer
- onsemi
- Part number
- MJD44H11T4G
- Category
- MEDIUM-POWER BIPOLAR TRANSISTORS
- Condition
- New & Original
- Compliance
- ROHS3 Compliant; REACH Unaffected
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
02 / TECHNICAL DETAILS
Technical parameters
10 parametersConstruction
- Transistor Type
- NPN
- Vce Saturation (Max) @ Ib, Ic
- 1V @ 400mA, 8A
- Power - Max
- 1.75 W
- Frequency - Transition
- 85MHz
- Package / Case
- TO-252-3, DPAK (2 Leads + Tab), SC-63
Performance
- Current - Collector (Ic) (Max)
- 8 A
- Voltage - Collector Emitter Breakdown (Max)
- 80 V
- Current - Collector Cutoff (Max)
- 1uA
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 40 @ 4A, 1V
- Operating Temperature
- -55°C ~ 150°C (TJ)
Moisture sensitivity level (MSL): 1 (Unlimited)
03 / RESOURCES
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.