COMPONENT PROFILE
MAGNACHIPMOSFETsMDF13N50TH
Refer to manufacturer for product imagery
01 / PRODUCT INFORMATION
Product overview
MAGNACHIP MOSFETs MDF13N50TH is a genuine original component suitable for circuit design and volume procurement. We supply full specifications, datasheets and flexible pricing, supporting both prototype and long-term supply.
- Manufacturer
- MAGNACHIP
- Part number
- MDF13N50TH
- Category
- MOSFETs
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
02 / TECHNICAL DETAILS
Technical parameters
14 parametersConstruction
- Channel
- N-Channel
- RDS(ON) @ VGS = 10 V
- 0.39 Ohm (typ) / 0.5 Ohm (max)
- Total Gate Charge Qg
- 33 nC
- Input Capacitance Ciss
- 1390 pF
- Power Dissipation PD
- 41 W
- Single Pulse Avalanche Energy EAS
- 580 mJ
- Package
- TO-220F
Performance
- Drain-Source Voltage VDSS
- 500 V
- Gate-Source Voltage VGSS
- +/-30 V
- Continuous Drain Current ID
- 13 A (Tc = 25 C) / 8.2 A (Tc = 100 C)
- Pulsed Drain Current IDM
- 52 A
- Gate Threshold Voltage VGS(th)
- 3.0 - 5.0 V
- Thermal Resistance Junction-to-Case
- 3.05 C/W
- Junction Temperature Range
- -55 ~ 150 C
03 / RESOURCES
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.