COMPONENT PROFILE
MCCMOSFETsMCG012N10YL-TP
Refer to manufacturer for product imagery
01 / PRODUCT INFORMATION
Product overview
MCC MOSFETs MCG012N10YL-TP is a genuine original component suitable for circuit design and volume procurement. We supply full specifications, datasheets and flexible pricing, supporting both prototype and long-term supply.
- Manufacturer
- MCC
- Part number
- MCG012N10YL-TP
- Category
- MOSFETs
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
02 / TECHNICAL DETAILS
Technical parameters
14 parametersConstruction
- Channel
- N-Channel
- RDS(ON) Max @ VGS = 10 V
- 12 mOhm @ 20 A, 10 V
- Total Gate Charge Qg
- 28 nC @ 10 V
- Input Capacitance Ciss
- 1370 pF @ 50 V
- Total Power Dissipation PD
- 78 W
- Single Pulse Avalanche Energy EAS
- 64 mJ
- Technology
- Split Gate Trench MOSFET
- Package
- DFN3333
Performance
- Drain-Source Voltage VDS
- 100 V
- Gate-Source Voltage VGS
- +/-20 V
- Continuous Drain Current ID
- 50 A (Tc = 25 C) / 35 A (Tc = 100 C)
- Pulsed Drain Current IDM
- 200 A
- Gate Threshold Voltage VGS(th)
- 3 V (max) @ 250 uA
- Operating Junction Temperature
- -55 ~ +175 C
03 / RESOURCES
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.