Product overview
MCC MOSFETs MCACLD70N04YHE3-TP is a genuine original component suitable for circuit design and volume procurement. We supply full specifications, datasheets and flexible pricing, supporting both prototype and long-term supply.
- Manufacturer
- MCC
- Part number
- MCACLD70N04YHE3-TP
- Category
- MOSFETs
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
16 parametersConstruction
- Channel
- N-Channel
- RDS(ON) Max @ VGS = 10 V
- 0.7 mOhm
- Total Gate Charge Qg
- 81.1 nC
- Gate-Drain Charge Qgd
- 18.8 nC
- Input Capacitance Ciss
- 5810 pF
- Output Capacitance Coss
- 3450 pF
- Power Rating PD
- 375 W
- Single Pulsed Avalanche Energy EAS
- 600 mJ
- Tj max
- 175 C
- Grade
- Automotive
- Package
- DFN5060-C
Performance
- Drain-Source Voltage VDS
- 40 V
- Gate-Source Voltage VGS
- +/-20 V
- Continuous Drain Current ID
- 350 A
- Pulsed Drain Current IDM
- 1400 A
- Gate Threshold Voltage VGS(th)
- 2 V (min) / 4 V (max)
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.